hiperdynfred tm epitaxial diode isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified diodes connected in series pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse test: pulse width = 300 s, duty cycle < 2.0 % ixys reserves the right to change limits, test conditions and dimensions. features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low cathode to tab capacitance (<15pf) planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour epoxy meets ul 94v-0 applications antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch i fav = 10 a v rrm = 600 v t rr = 30 ns v rrm v rrm type v v 600 300 DSEE8-06CC symbol conditions maximum ratings i frms 20 a i favm t c = 110c; rectangular, d = 0.5 10 a i frm t p < 10 s; rep. rating, pulse width limited by t vjm 10 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 60 a e as t vj = 25c; non-repetitive 0.5 mj i as = 2 a; l = 180 h i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.2 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 60 w v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force 11...65 / 2.4...11 n / lb weight typical 3 g symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 60 a t vj = 150c v r = v rrm 0.2 ma v f i f = 10 a; t vj = 125c 1.3 v t vj = 25c 1.75 v r thjc 2.5 k/w r thch 0.6 k/w t rr i f = 1 a; -di/dt = 50 a/s; 30 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 12 a; -di f /dt = 100 a/s 2 2.4 a t vj = 100c 98758 (12/00) ? 2000 ixys all rights reserved DSEE8-06CC advance technical information 1 2 3 * patent pending isoplus220 tm 3 2 isolated back surface * 1
DSEE8-06CC isoplus220 outline note: all terminals are solder plated. 1 - cathode 2 - anode/cathode 3 - anode
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